AFGY160T65SPD-B4
AFGY160T65SPD-B4 is IGBT manufactured by onsemi.
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning
650 V, 160 A
Features
- AEC- Q101 Qualified and PPAP Capable
- Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- Efficient
- Tight Parameter Distribution
- High Input Impedance
- 100% of the Parts are Dynamically Tested
- Short Circuit Ruggedness > 6 ms @ 25°C
- Copacked with Soft, Fast Recovery Extremefast Diode
- This Device is Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Benefits
- Very Low Conduction and Switching Losses for a High Efficiency
Operation in Various Applications
- Rugged Transient...
