AFGY160T65SPD-B4 - IGBT

Datasheet Summary

Features

AEC.
Q101 Qualified and PPAP Capable.
Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 160 A.
Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
Efficient.
Tight Parameter Distribution.
High Input Impedance.
100% of the Parts are Dynamically Tested.
Short Circuit Ruggedness > 6 ms @ 25°C.
Copacked with Soft, Fast Recovery Extremefast Diode.
This Device is Pb.

ON Semiconductor

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Datasheet Details

Part number	AFGY160T65SPD-B4
Manufacturer	ON Semiconductor
File Size	2.53 MB
Description	IGBT
Datasheet	AFGY160T65SPD-B4 Datasheet
Additional preview pages of the AFGY160T65SPD-B4 datasheet.

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Full PDF Text Transcription

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Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A AFGY160T65SPD-B4 Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.

Published: Oct 3, 2022 |