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AFGY120T65SPD Datasheet

Manufacturer: onsemi
AFGY120T65SPD datasheet preview

Datasheet Details

Part number AFGY120T65SPD
Datasheet AFGY120T65SPD-ONSemiconductor.pdf
File Size 350.10 KB
Manufacturer onsemi
Description IGBT
AFGY120T65SPD page 2 AFGY120T65SPD page 3

AFGY120T65SPD Overview

Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing.

AFGY120T65SPD Key Features

  • AEC-Q101 Qualified
  • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 120 A
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • Tight Parameter Distribution
  • High Input Impedance
  • 100% of the Parts are Tested for ILM
  • Short Circuit Ruggedness
  • Co-packed with Soft Fast Recovery Diode
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