AFGY120T65SPD - IGBT

Datasheet Summary

Features

AEC.
Q101 Qualified.
Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 120 A.
Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
Tight Parameter Distribution.
High Input Impedance.
100% of the Parts are Tested for ILM.
Short Circuit Ruggedness.
Co.
packed with Soft Fast Recovery Diode Typical.

ON Semiconductor

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Datasheet Details

Part number	AFGY120T65SPD
Manufacturer	ON Semiconductor
File Size	350.10 KB
Description	IGBT
Datasheet	AFGY120T65SPD Datasheet
Additional preview pages of the AFGY120T65SPD datasheet.

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Full PDF Text Transcription

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Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing. Features • AEC−Q101 Qualified • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.

Published: Oct 3, 2022 |