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ATP112 - P-Channel Power MOSFET

Features

  • ON-resistance RDS(on)1=33mΩ(typ. ).
  • 4V drive.
  • Protection diode in.
  • Input Capacitance Ciss=1450pF(typ. ).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.

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Datasheet Details

Part number ATP112
Manufacturer onsemi
File Size 254.52 KB
Description P-Channel Power MOSFET
Datasheet download datasheet ATP112 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1754A ATP112 P-Channel Power MOSFET –60V, –25A, 43mΩ, Single ATPAK http://onsemi.com Features • ON-resistance RDS(on)1=33mΩ(typ.) • 4V drive • Protection diode in • Input Capacitance Ciss=1450pF(typ.
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