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  ON Semiconductor Electronic Components Datasheet  

ATP112 Datasheet

P-Channel Power MOSFET

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Ordering number : ENA1754A
ATP112
P-Channel Power MOSFET
–60V, –25A, 43mΩ, Single ATPAK
http://onsemi.com
Features
ON-resistance RDS(on)1=33mΩ(typ.)
4V drive
Protection diode in
Input Capacitance Ciss=1450pF(typ.)
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--10V, L=500μH, IAV=--13A
*2 L500μH, Single pulse
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--25
--75
40
150
--55 to +150
50
--13
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP112-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP112
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/72110PA TKIM TC-00002329 No. A1754-1/7


  ON Semiconductor Electronic Components Datasheet  

ATP112 Datasheet

P-Channel Power MOSFET

No Preview Available !

Electrical Characteristics at Ta=25°C
ATP112
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--13A
ID=--13A, VGS=--10V
ID=--7A, VGS=--4.5V
ID=--3.5A, VGS=--4V
VDS=--20V, f=1MHz
See specied Test Circuit.
VDS=--30V, VGS=--10V, ID=--25A
IS=--25A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --30V
ID=13A
RL=2.3Ω
D VOUT
ATP112
P.G 50Ω S
min
--60
Ratings
typ
--1.2
24
33
42
45
1450
155
125
10
80
150
120
33.5
5.3
7.9
--0.97
max
--1
±10
--2.6
43
59
63
--1.5
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ATP112-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1754-2/7


Part Number ATP112
Description P-Channel Power MOSFET
Maker ON Semiconductor
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ATP112 Datasheet PDF






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