ATP112 - P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

ON-resistance RDS(on)1=33mΩ(typ. ).
4V drive.
Protection diode in.
Input Capacitance Ciss=1450pF(typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.

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Published: Aug 23, 2015 |