ATP113
ATP113 is P-Channel Power MOSFET manufactured by onsemi.
Features
- ON- Resistance RDS(on)1 = 22.5 m W (typ)
- 4 V Drive
- Protection Diode in
- Input Capacitance Ciss = 2400 p F (typ)
- This Device is a Pb- Free and Halogen Free
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) (Note 1)
Parameter
Symbol Conditions Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Drain Current (DC)
Drain Current (PW ≤ 10 ms)
VDSS
- 60
VGSS
±20
- 35
IDP PW ≤ 10 ms,
- 105 A duty cycle ≤ 1%
Allowable Power Dissipation PD Tc = 25°C
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
- 55 to °C +150
Avalanche Energy
(Single Pulse) (Note 1)
95 m J
Avalanche Current (Note 2)
-...
