Datasheet4U Logo Datasheet4U.com

ATP201 - MOSFET

Features

  • Low ON-resistance.
  • Slim package.
  • Protection diode in.
  • 4.5V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 Note :.
  • 1 VDD=10V, L=50μH, IAV=18.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ATP201 N-Channel Silicon MOSFET Sanyo Semicon Device
ATP202 N-Channel Silicon MOSFET Sanyo Semicon Device
ATP203 N-Channel Silicon MOSFET Sanyo Semicon Device
ATP204 N-Channel Silicon MOSFET Sanyo Semicon Device
ATP206 N-Channel Silicon MOSFET Sanyo Semicon Device

Other Datasheets by onsemi

Part Number Description
ATP202 N-Channel Power MOSFET
ATP203 N-Channel Power MOSFET
ATP204 N-Channel Power MOSFET
ATP206 N-Channel Power MOSFET
ATP207 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA1547A ATP201 N-Channel Power MOSFET 30V, 35A, 17mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • Slim package • Protection diode in • 4.5V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=50μH, IAV=18A *2 L≤50μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 30 ±20 35 105 30 150 --55 to +150 10 18 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
Published: |