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  ON Semiconductor Electronic Components Datasheet  

ATP201 Datasheet

MOSFET

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Ordering number : ENA1547A
ATP201
N-Channel Power MOSFET
30V, 35A, 17mΩ, Single ATPAK
http://onsemi.com
Features
Low ON-resistance
Slim package
Protection diode in
4.5V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=50μH, IAV=18A
*2 L50μH, Single pulse
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
30
±20
35
105
30
150
--55 to +150
10
18
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP201-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP201
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/82609PA TKIM TC-00002027 No. A1547-1/7


  ON Semiconductor Electronic Components Datasheet  

ATP201 Datasheet

MOSFET

No Preview Available !

ATP201
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=18A
ID=18A, VGS=10V
ID=9A, VGS=4.5V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=15V, VGS=10V, ID=35A
IS=35A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=18A
RL=0.83Ω
D VOUT
ATP201
P.G 50Ω S
min
30
Ratings
typ
1.2
24
13
23
985
180
100
10
230
51
39
17
4.7
2.8
0.97
max
1
±10
2.6
17
33
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ATP201-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1547-2/7


Part Number ATP201
Description MOSFET
Maker ON Semiconductor
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ATP201 Datasheet PDF






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