ATP204 - N-Channel Power MOSFET

onsemi

Key Features

Low ON-resistance.
4.5V drive.
Halogen free compliance.
Large current.
Slim package.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 Avalanche Current.
2 Note :.
1.

ATP204 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ATP204
Manufacturer	onsemi
File Size	252.28 KB
Description	N-Channel Power MOSFET
Datasheet	ATP204 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ATP204	N-Channel Silicon MOSFET	Sanyo Semicon Device
ATP201	N-Channel Silicon MOSFET	Sanyo Semicon Device
ATP202	N-Channel Silicon MOSFET	Sanyo Semicon Device
ATP203	N-Channel Silicon MOSFET	Sanyo Semicon Device
ATP206	N-Channel Silicon MOSFET	Sanyo Semicon Device

Other Datasheets by onsemi

Part Number	Description
ATP201	MOSFET
ATP202	N-Channel Power MOSFET
ATP203	N-Channel Power MOSFET
ATP206	N-Channel Power MOSFET
ATP207	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Ordering number : ENA1551A ATP204 N-Channel Power MOSFET 30V, 100A, 5.6mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=15V, L=100μH, IAV=50A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 30 ±20 100 300 60 150 --55 to +150 235 50 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.