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ATP201 - MOSFET

Datasheet Summary

Features

  • Low ON-resistance.
  • Slim package.
  • Protection diode in.
  • 4.5V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 Note :.
  • 1 VDD=10V, L=50μH, IAV=18.

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Datasheet Details

Part number ATP201
Manufacturer ON Semiconductor
File Size 251.80 KB
Description MOSFET
Datasheet download datasheet ATP201 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1547A ATP201 N-Channel Power MOSFET 30V, 35A, 17mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • Slim package • Protection diode in • 4.5V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=50μH, IAV=18A *2 L≤50μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 30 ±20 35 105 30 150 --55 to +150 10 18 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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