B817C
B817C is Bipolar Transistor manufactured by onsemi.
Features
- Large current capacitance
- Wide SOA and high durability against breakdown
- Adoption of MBIT process
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO IC ICP
Collector Dissipation
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
Conditions
Ratings
Unit
-160
-140
--6
--12
--20
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ)
7539-001
2SB817C-1E...
