BAW56TT1G
BAW56TT1G is Dual Switching Diode manufactured by onsemi.
Features
- S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol
Max
Unit
Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS
Vdc
200 m Adc
IFM(surge)
500 m Adc
Characteristic
Symbol
Max
Unit
Total Device Dissipation, FR- 4 Board (Note 1), TA = 25°C Derated above 25°C
225 m W
1.8 m W/°C
Thermal Resistance, Junction- to- Ambient (Note 1)
RθJA
°C/W
Total Device Dissipation, FR- 4 Board (Note 2), TA = 25°C Derated above 25°C
360 m W
2.9 m W/°C
Thermal Resistance, Junction- to- Ambient (Note 2)
RθJA
°C/W
Junction and Storage Temperature Range
TJ, Tstg
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR- 4 @ Minimum Pad 2. FR- 4 @ 1.0 × 1.0 Inch Pad
DATA SHEET...
