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  ON Semiconductor Electronic Components Datasheet  

BC237B Datasheet

Amplifier Transistor

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BC237B
Amplifier Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Emitter Voltage
Collector −Emitter Voltage
Collector Current − Continuous
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Operating and Storage Temperature
Range
Symbol Value
Unit
VCEO
VCES
VEBO
IC
PD
45
Vdc
50
Vdc
6.0
Vdc
100
mAdc
350
mW
2.8
mW/°C
PD
1.0
W
8.0
mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
357
°C/W
Thermal Resistance, Junction−to−Case
RqJC
125
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC23
7B
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 5
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BC237B
TO−92
5000 Units / Bulk
BC237BG
TO−92
(Pb−Free)
5000 Units / Bulk
BC237BRL1G TO−92 2000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC237/D


  ON Semiconductor Electronic Components Datasheet  

BC237B Datasheet

Amplifier Transistor

No Preview Available !

BC237B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
Emitter −Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCE = 50 V, VBE = 0)
(VCE = 50 V, VBE = 0) TA = 125°C
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
Collector −Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base−Emitter On Voltage
(IC = 100 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
Symbol
Min
Typ
Max
V(BR)CEO
45
V(BR)EBO
6.0
ICES
0.2
15
0.2
4.0
hFE
VCE(sat)
VBE(sat)
VBE(on)
150
200
290
460
180
0.07
0.2
0.2
0.6
0.6
0.83
1.05
0.5
0.55 0.62
0.7
0.83
fT
Cobo
Cibo
NF
100
150
200
4.5
8.0
2.0
10
Unit
V
V
nA
mA
V
V
V
MHz
pF
pF
dB
http://onsemi.com
2


Part Number BC237B
Description Amplifier Transistor
Maker ON Semiconductor
PDF Download

BC237B Datasheet PDF






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