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BC237B
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Emitter Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C Operating and Storage Temperature Range
Symbol Value
Unit
VCEO VCES VEBO
IC PD
45
Vdc
50
Vdc
6.0
Vdc
100
mAdc
350
mW
2.8
mW/°C
PD
1.0
W
8.0
mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
357
°C/W
Thermal Resistance, Junction−to−Case
RqJC
125
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
BC237B Datasheet
