BC237B Datasheet | Philips Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 45 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP plements: BC307; BC307B. PINNING PIN 1 2 3 emitter base collector BC237; BC237B DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot h FE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain BC237 BC237B f T transition frequency IC = 10 m A; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 m A; VCE = 5 V 120 200 100 460 460 - MHz open emitter open base CONDITIONS - - - - MIN. MAX. 50 45 200 500 V V m A m W UNIT 1997 Sep 04 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 BC237; BC237B MIN. MAX. 50 45 6 100 200 200 500 +150 150 +150 V V V UNIT m A m A m A m W °C °C °C VALUE 250 UNIT K/W 1997 Sep 04 Philips Semiconductors Product specification NPN general purpose transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE h FE PARAMETER collector cut-off current emitter cut-off current DC current gain DC current gain BC237 BC237B VCEsat VBEsat VBE Cc Ce f T F Note 1....