The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BC237B
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Emitter Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C Operating and Storage Temperature Range
Symbol Value
Unit
VCEO VCES VEBO
IC PD
45
Vdc
50
Vdc
6.0
Vdc
100
mAdc
350
mW
2.8
mW/°C
PD
1.0
W
8.0
mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
357
°C/W
Thermal Resistance, Junction−to−Case
RqJC
125
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
BC237B Datasheet
