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DATA SHEET www.onsemi.com
NPN Darlington Transistor
BC517
Features
• This Device is Designed for Applications Requiring Extremely
High Current Gain at Currents to 1.0 A
• Sourced from Process 05 • This is a Pb−Free Device
1 2 3
1. Collector 2. Base 3. Emitter
TO−92 3 4.825x4.76 LEADFORMER CASE 135AR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2)
Symbol
Parameter
Value
Unit
VCEO VCBO VEBO
IC TJ, TSTG
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range
30
V
40
V
10
V
1.2
A
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
BC517 Datasheet
