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  ON Semiconductor Electronic Components Datasheet  

BD138G Datasheet

Plastic Medium-Power Silicon PNP Transistors

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BD136G, BD138G, BD140G
Plastic Medium-Power
Silicon PNP Transistors
This series of plastic, medium−power silicon PNP transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
Features
High DC Current Gain
BD 136, 138, 140 are complementary with BD 135, 137, 139
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD136G
BD138G
BD140G
VCEO
45
60
80
Vdc
Collector−Base Voltage
BD136G
BD138G
BD140G
VCBO
45
60
100
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VEBO
IC
IB
PD
5.0 Vdc
1.5 Adc
0.5 Adc
1.25 Watts
10 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
12.5 Watts
100 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
RqJC
RqJA
Max
10
100
Unit
°C/W
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 16
1
http://onsemi.com
1.5 A POWER TRANSISTORS
PNP SILICON
45, 60, 80 V, 12.5 W
COLLECTOR
2, 4
3
BASE
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
BD1xxG
Y
WW
BD1xx
G
= Year
= Work Week
= Device Code
xx = 36, 38, 40
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD136G
TO−225
(Pb−Free)
500 Units/Box
BD138G
TO−225
(Pb−Free)
500 Units/Box
BD140G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
BD136/D


  ON Semiconductor Electronic Components Datasheet  

BD138G Datasheet

Plastic Medium-Power Silicon PNP Transistors

No Preview Available !

BD136G, BD138G, BD140G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.03 Adc, IB = 0)
BD136G
BD138G
BD140G
BVCEO
45
60
80
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TC = 125 _C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ICBO
IEBO
mAdc
0.1
10
mAdc
10
DC Current Gain
(IC = 0.005 A, VCE = 2 V)
(IC = 0.15 A, VCE = 2 V)
(IC = 0.5 A, VCE = 2 V)
Collector−Emitter Saturation Voltage (Note 1)
(IC = 0.5 Adc, IB = 0.05 Adc)
hFE*
VCE(sat)*
25
40
25
250
Vdc
0.5
Base−Emitter On Voltage (Note 1)
(IC = 0.5 Adc, VCE = 2.0 Vdc)
VBE(on)*
Vdc
1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
1000
100
10
0.001
150°C
25°C
−55°C
TYPICAL CHARACTERISTICS
VCE = 2 V
0.5
IC/IB = 10
0.4
0.3
0.2
−55°C
25°C
150°C
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
0.1
0
10
0.001
0.01
0.1
1 10
IC, COLLECTOR CURRENT (A)
Figure 2. Collector−Emitter Saturation Voltage
http://onsemi.com
2


Part Number BD138G
Description Plastic Medium-Power Silicon PNP Transistors
Maker ON Semiconductor
PDF Download

BD138G Datasheet PDF






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