BDX53CG Datasheet | onsemi

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power plementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features - High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc - Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C - Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc - Monolithic Construction with Built−In Base−Emitter Shunt Resistors - These Devices are Pb−Free and are RoHS pliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage VCEO Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B 80 BDX53C, BDX54C 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage VCB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B BDX53C, BDX54C Vdc 80 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak VEB...