BDX53C Description
Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
BDX53C is NPN SILICON POWER DARLINGTONS manufactured by Bourns.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BDX53C | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BDX53C | NPN Epitaxial Silicon Transistor | |
Motorola Semiconductor |
BDX53C | Plastic Medium-Power Complementary Silicon Transistors |
| BDX53C | Plastic Medium-Power Complementary Silicon Transistors | |
TRANSYS |
BDX53C | NPN Transistor |
Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.