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BDX53CG - Plastic Medium-Power Complementary Silicon Transistors

Download the BDX53CG datasheet PDF. This datasheet also covers the BDX53B variant, as both devices belong to the same plastic medium-power complementary silicon transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector Emitter Sustaining Voltage.
  • @ 100 mAdc VCEO(sus) = 80 Vdc (Min).
  • BDX53B, 54B VCEO(sus) = 100 Vdc (Min).
  • BDX53C, 54C.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc.
  • Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors.
  • These D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BDX53B_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BDX53CG
Manufacturer onsemi
File Size 95.97 KB
Description Plastic Medium-Power Complementary Silicon Transistors
Datasheet download datasheet BDX53CG Datasheet

📁 Similar Datasheet

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BDX53C NPN SILICON POWER DARLINGTONS Bourns
BDX53C NPN Transistor TRANSYS

Other Datasheets by onsemi

Part Number Description
BDX53C Plastic Medium-Power Complementary Silicon Transistors
BDX53B Plastic Medium-Power Complementary Silicon Transistors
BDX53BG Plastic Medium-Power Complementary Silicon Transistors
BDX54B Plastic Medium-Power Complementary Silicon Transistors
BDX54BG Plastic Medium-Power Complementary Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.