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BDX53C - Plastic Medium-Power Complementary Silicon Transistors

Key Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector Emitter Sustaining Voltage.
  • @ 100 mAdc VCEO(sus) = 80 Vdc (Min).
  • BDX53B, 54B VCEO(sus) = 100 Vdc (Min).
  • BDX53C, 54C.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc.
  • Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors.
  • These D.

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Datasheet Details

Part number BDX53C
Manufacturer onsemi
File Size 95.96 KB
Description Plastic Medium-Power Complementary Silicon Transistors
Datasheet download datasheet BDX53C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.