BDX53BG Datasheet | onsemi

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power plementary Silicon Transistors These devices are designed for general- purpose amplifier and low- speed switching applications. Features - High DC Current Gain - h FE = 2500 (Typ) @ IC = 4.0 Adc - Collector Emitter Sustaining Voltage - @ 100 m Adc VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C - Low Collector- Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc - Monolithic Construction with Built- In Base- Emitter Shunt Resistors - These Devices are Pb- Free and are Ro HS pliant- ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Emitter Voltage VCEO Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B BDX53C, BDX54C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B BDX53C, BDX54C Vdc 80 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter- Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector...