BDX53BG Overview
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power plementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications.
BDX53BG Key Features
- High DC Current Gain
- hFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector Emitter Sustaining Voltage
- @ 100 mAdc
- BDX53B, 54B
- BDX53C, 54C
- Low Collector-Emitter Saturation Voltage
- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- These Devices are Pb-Free and are RoHS pliant
