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BDX53B - Plastic Medium-Power Complementary Silicon Transistors

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.