BDX53B Description
·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage.
BDX53B is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
BDX53B | Plastic Medium-Power Complementary Silicon Transistors |
| BDX53B | Plastic Medium-Power Complementary Silicon Transistors | |
STMicroelectronics |
BDX53B | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BDX53B | NPN Epitaxial Silicon Transistor | |
TRANSYS |
BDX53B | NPN Transistor |
·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage.