| Part Number | BDX53B Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching app. Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ. |
BDX53B Datasheet and Specifications PDF
The BDX53B is a Plastic Medium-Power Complementary Silicon Transistors.
| Part Number | BDX53B Datasheet |
|---|---|
| Description | Plastic Medium-Power Complementary Silicon Transistors |
| Manufacturer | onsemi |
| Overview |
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
Plastic Medium-Power Complementary Silicon Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Feat.
* High DC Current Gain * hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector Emitter Sustaining Voltage * @ 100 mAdc VCEO(sus) = 80 Vdc (Min) * BDX53B, 54B VCEO(sus) = 100 Vdc (Min) * BDX53C, 54C * Low Collector *Emitter Saturation Voltage * VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max. |
| Part Number | BDX53B Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX54/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN 1 2 3 DESC. . |
| Part Number | BDX53B Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat) = 2.0 V(Max) @ IC = 3.0 A ·Complement to Type BD. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; I. |