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BDX53F - Silicon NPN Darlington Power Transistor

General Description

Collector Current -IC= 8A High DC Current Gain- : hFE= 500(Min)@ IC= 2A Complement to Type BDX54F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in power linear and switching applications.

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isc Silicon NPN Darlington Power Transistor BDX53F DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain- : hFE= 500(Min)@ IC= 2A ·Complement to Type BDX54F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCER Collector-Emitter Voltage 160 VCEO Collector-Emitter Voltage 160 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 12 IB Base Current-Continuous 0.