| Part Number | BDX53F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= 8A ·High DC Current Gain- : hFE= 500(Min)@ IC= 2A ·Complement to Type BDX54F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·D. gton Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 10. |
BDX53F Datasheet
The BDX53F is a Silicon NPN Darlington Power Transistor.
| Part Number | BDX53F |
|---|---|
| Description | Complementary Silicon Power Darlington Ttransistors |
| Manufacturer | TGS |
| Overview |
The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifier.
VEB=5.0V, IC=0
Collector-Emitter Sustaining Voltage DC Current Gain
VCEO hFE
IC=50mA, IB=0 VCE=5V, IC=2.0A
Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=10mA
Base-Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=10mA
Parallel-diode Forward Voltage
VF IF=2A
Min. * * * 160 500 * * *. |
| Part Number | BDX53F |
|---|---|
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Manufacturer | STMicroelectronics |
| Overview | The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applic. 10 KΩ R2 Typ. = 150 Ω Value BDX53F BDX54F 160 160 5 8 12 0.2 60 -65 to 150 150 Unit V V V A A A W oC oC 1/4 BDX53F / BDX54F THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 2.08 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 . |