BDX53C Description
·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage.
BDX53C is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BDX53C | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BDX53C | NPN Epitaxial Silicon Transistor | |
Motorola Semiconductor |
BDX53C | Plastic Medium-Power Complementary Silicon Transistors |
| BDX53C | Plastic Medium-Power Complementary Silicon Transistors | |
Bourns |
BDX53C | NPN SILICON POWER DARLINGTONS |
·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage.