| Part Number | BDX53C |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order code BDX53B BD.
* Good hFE linearity * High fT frequency * Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application * Audio amplifiers * Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Dar. |
BDX53C Datasheet
The BDX53C is a COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS.
| Part Number | BDX53C |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX54/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN 1 2 3 DESC. . |
| Part Number | BDX53C |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
BDX53/A/B/C — NPN Epitaxial Silicon Transistor
BDX53/A/B/C NPN Epitaxial Silicon Transistor
Applications
• Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications
Featu.
* Power Darlington TR * Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter B R1 R1 ≅ 8.4kΩ R2 ≅ 0.3kΩ R2 E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BDX53 : BD. |
| Part Number | BDX53C |
|---|---|
| Description | Plastic Medium-Power Complementary Silicon Transistors |
| Manufacturer | onsemi |
| Overview |
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
Plastic Medium-Power Complementary Silicon Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Feat.
* High DC Current Gain * hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector Emitter Sustaining Voltage * @ 100 mAdc VCEO(sus) = 80 Vdc (Min) * BDX53B, 54B VCEO(sus) = 100 Vdc (Min) * BDX53C, 54C * Low Collector *Emitter Saturation Voltage * VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max. |