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  ON Semiconductor Electronic Components Datasheet  

BDX54BG Datasheet

Plastic Medium-Power Complementary Silicon Transistors

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BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
VCEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B
80
BDX53C, BDX54C
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
VCB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B
BDX53C, BDX54C
Vdc
80
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak
VEB
5.0
Vdc
IC
8.0
Adc
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
IB
0.2
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25°C
PD
65
W
Derate above 25°C
0.48
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
TJ, Tstg −65 to +150 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case
RqJA
RqJC
70
°C/W
1.92
°C/W
www.onsemi.com
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
1
3
Base 2 Emitter
Collector
BDX5xy =
A
=
Y
=
WW =
G
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 15
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BDX53B/D


  ON Semiconductor Electronic Components Datasheet  

BDX54BG Datasheet

Plastic Medium-Power Complementary Silicon Transistors

No Preview Available !

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
TA TC
4.0 80
3.0 60
2.0 40
1.0 20
TC
TA
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
BDX53B, BDX54B
80
BDX53C, BDX54C
100
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
BDX53B, BDX54B
BDX53C, BDX54C
BDX53B, BDX54B
BDX53C, BDX54C
ICEO
ICBO
mAdc
0.5
0.5
mAdc
0.2
0.2
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
hFE
750
VCE(sat)
2.0
Vdc
4.0
Base−Emitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA)
VBE(sat)
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
BDX53B, 53C
BDX54B, 54C
pF
300
200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
www.onsemi.com
2


Part Number BDX54BG
Description Plastic Medium-Power Complementary Silicon Transistors
Maker ON Semiconductor
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BDX54BG Datasheet PDF






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