STMicroelectronics BDX54B
The devices are manufactured in planar base island technology with monolithic Darlington configuration.| Part No. | BDX54B |
|---|---|
| Datasheet | BDX54B Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Good hFE linearity● High fT frequency
● Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application
● Audio amplifiers
● Linear and switching industrial equipment
DESCRIPTION
3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BDX53B BDX53C BDX54B BDX54C Marking BDX53B BDX53C BDX54B BDX54C R1 typ.= 10 kΩ R2 typ.= 150 Ω Package TO-220 Packaging Tube October 2007 Rev 4 1/7 7 Electrical ratings 1 Electrical ratings BDX53B - BDX53C - BDX54B - BDX54C Note: Table 2. Absolute maximum ratings Symbol Parameter NPN VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (repetitive) Base current Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature PNP For PNP types voltage and current values are negative. Value BDX53B BDX53C BDX54B BDX54C 80 100 80 100 5 8 12...
