BDX54B Datasheet and Specifications PDF

The BDX54B is a Plastic Medium-Power Complementary Silicon Transistors.

Key Specifications

PackageTO-220-3
Pins3
Height15.75 mm
Length10.53 mm
Width4.83 mm
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberBDX54B Datasheet
Manufactureronsemi
Overview BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Feat.
* High DC Current Gain
* hFE = 2500 (Typ) @ IC = 4.0 Adc
* Collector Emitter Sustaining Voltage
* @ 100 mAdc VCEO(sus) = 80 Vdc (Min)
* BDX53B, 54B VCEO(sus) = 100 Vdc (Min)
* BDX53C, 54C
* Low Collector
*Emitter Saturation Voltage
* VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max.
Part NumberBDX54B Datasheet
DescriptionCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
ManufacturerSTMicroelectronics
Overview The devices are manufactured in planar base island technology with monolithic Darlington configuration. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BDX53B BD.
* Good hFE linearity
* High fT frequency
* Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application
* Audio amplifiers
* Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Dar.
Part NumberBDX54B Datasheet
DescriptionPlastic Medium-Power Complementary Silicon Transistors
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching app. Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ.
Part NumberBDX54B Datasheet
DescriptionPNP Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview BDX54/A/B/C BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively 1 TO. Collector Cut-off Current : BDX54 : BDX54A : BDX54B : BDX54C Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 200 - 200 - 200 - 200 - 50.

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