BDX54B - Plastic Medium-Power Complementary Silicon Transistors

onsemi

Key Features

High DC Current Gain.
hFE = 2500 (Typ) @ IC = 4.0 Adc.
Collector Emitter Sustaining Voltage.
@ 100 mAdc VCEO(sus) = 80 Vdc (Min).
BDX53B, 54B VCEO(sus) = 100 Vdc (Min).
BDX53C, 54C.
Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc.
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors.
These D.

BDX54B plastic medium-power complementary silicon transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	BDX54B
Manufacturer	onsemi
File Size	102.23 KB
Description	Plastic Medium-Power Complementary Silicon Transistors
Datasheet	BDX54B Datasheet

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Other Datasheets by onsemi

Part Number	Description
BDX54BG	Plastic Medium-Power Complementary Silicon Transistors
BDX54C	Plastic Medium-Power Complementary Silicon Transistors
BDX54CG	Plastic Medium-Power Complementary Silicon Transistors
BDX53B	Plastic Medium-Power Complementary Silicon Transistors
BDX53BG	Plastic Medium-Power Complementary Silicon Transistors

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.