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BS270 - N-Channel Enhancement Mode Field Effect Transistor

Description

These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage (RGS < 1MΩ) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs) ID Drain Current - Continuou.

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Datasheet Details

Part number BS270
Manufacturer onsemi
File Size 464.30 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet BS270 Datasheet

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BS270 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
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