BS270 - N-Channel Enhancement Mode Field Effect Transistor

ON Semiconductor

Datasheet Details

Part number	BS270
Manufacturer	ON Semiconductor ↗
File Size	464.30 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	BS270-ONSemiconductor.pdf

These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage (RGS < 1MΩ) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs) ID Drain Current - Continuou.

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Published: Mar 22, 2020 |