BS270 transistor equivalent, n-channel enhancement mode field effect transistor.
400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capab.
requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small.
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