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BS270 Datasheet N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor.

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications requiring up to 500mA DC.

Key Features

  • 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage T A = 25°C unless otherwise noted BS270 60 60 Units V V V Drain-Gate Voltage (RGS < 1MΩ) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs.

Similar Datasheet

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ON Semiconductor Logo BS270 N-Channel Enhancement Mode Field Effect Transistor ON Semiconductor

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