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BS270 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage T A = 25°C unless otherwise noted BS270 60 60 Units V V V Drain-Gate Voltage (RGS < 1MΩ) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs.

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Datasheet Details

Part number BS270
Manufacturer Fairchild Semiconductor
File Size 348.17 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet BS270 Datasheet
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    April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
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