BSS84 Description
This P−channel enhancement−mode field−effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on−state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52.
BSS84 Key Features
- 0.13 A, -50 V, RDS(on) = 10 W at VGS = -5 V
- Voltage-Controlled P-Channel Small-Signal Switch
- High-Density Cell Design for Low RDS(on)
- High Saturation Current
- This Device is Pb-Free and Halogen Free
- Date Code orientation and/or position may vary depending upon manufacturing location
- Rev. 5