BTA08-800BW3G Datasheet | onsemi

BTA08-600BW3G, BTA08-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high mutating di/dt are required. Features http://onsemi. - - - - - - - - - Blocking Voltage to 800 V On-State Current Rating of 8 A RMS at 80°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to d V/dt - 2000 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High mutating d I/dt - 1.5 A/ms minimum at 125°C Internally Isolated (2500 VRMS) These Devices are Pb- Free and are Ro HS pliant- Rating Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 8.0 90 A A x A Y WW G Value Unit V 1 2 TRIACS 8 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Off- State Voltage (Note 1) (TJ = - 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA08- 600BW3G BTA08- 800BW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Non- Repetitive Surge Peak Off- State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) BTA08- x BWG AYWW TO- 220AB CASE 221A STYLE 12 I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg Viso 36 VDSM/VRSM +100 4.0 20 1.0 - 40 to +125 - 40 to +150 2500 A2sec V A W W °C °C V = 6 or 8 = Assembly Location (Optional)- = Year = Work Week = Pb- Free Package - The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank. PIN ASSIGNMENT 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate No Connection Stresses exceeding Maximum Ratings may damage the device. Maximum...