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  ON Semiconductor Electronic Components Datasheet  

BU406 Datasheet

NPN Power Transistors

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BU406, BU407
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.
Features
High Voltage
Fast Switching Speed
Low Saturation Voltage
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
BU406 VCEO
BU407
Value
200
150
Unit
Vdc
Collector−Emitter Voltage
BU406 VCEV 400 Vdc
BU407
330
Collector−Base Voltage
BU406 VCBO 400 Vdc
BU407
330
Emitter−Base Voltage
Collector Current − Continuous
− Peak Repetitive
VEBO 6 Vdc
IC 7 Adc
10
Collector Current − Peak (10 ms)
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25°C
ICM 15 Adc
IB 4 Adc
PD 60 W
0.48 W/_C
Operating and Storage Junction
Temperature Storage
TJ, Tstg −65 to 150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes1/8from Case for 5 Seconds
Symbol
RqJC
RqJA
TL
Max
2.08
70
260
Unit
_C/W
_C/W
_C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 11
1
www.onsemi.com
NPN SILICON
POWER TRANSISTORS
7 AMPERES − 60 WATTS
150 AND 200 VOLTS
SCHEMATIC
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
4
1
2
3
TO−220
CASE 221A
STYLE 1
BU40xG
AY WW
1
BU40x
A
Y
WW
G
= Specific Device Code
x = 6 or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BU406G
TO−220AB
(Pb−Free)
50 Units / Rail
BU407G
TO−220AB
(Pb−Free)
50 Units / Rail
Publication Order Number:
BU406/D


  ON Semiconductor Electronic Components Datasheet  

BU406 Datasheet

NPN Power Transistors

No Preview Available !

BU406, BU407
ÎÎÎÎELEÎÎCTÎÎRICÎÎAL ÎÎCHAÎÎRAÎÎCTEÎÎRISÎÎTICÎÎS (TÎÎC=ÎÎ25_ÎÎC unÎÎlessÎÎotheÎÎrwisÎÎe noÎÎted)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
Symbol
Min Typ Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
BU406 VCEO(sus)
200
Vdc
BU407
150 −
Collector Cutoff Current
(VCE = Rated VCEV, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C)
ICES
mAdc
−−5
− − 0.1
−−1
Emitter Cutoff Current
(VEB = 6 Vdc, IC = 0)
BU406, BU407
IEBO
− − 1 mAdc
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
VCE(sat) − − 1 Vdc
Base−Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
VBE(sat) − − 1.2 Vdc
Forward Diode Voltage
(IEC = 5 Adc) “D” only
VEC − − 2 Volts
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz)
fT
10 −
− MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
− 80 −
pF
SWITCHING CHARACTERISTICS
Inductive Load Crossover Time
(VCC = 40 Vdc, IC = 5 Adc, IB1 = IB2 = 0.5 Adc, L = 150 mH)
tc
− 0.75
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 1%.
100
70 TJ = 100°C
50 25°C
30 VCE = 5 V
20
10
0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
5 7 10
10
dc
1 BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
TC = 25°C
BU407
BU406
2 3 5 7 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
200
www.onsemi.com
2


Part Number BU406
Description NPN Power Transistors
Maker ON Semiconductor
Total Page 3 Pages
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