logo

NPN Matched Datasheet



Part Number Description Manufacture
C3205
NPN Transistor
Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J
Manufacture
SeCoS
3DD13009
NPN Transistor
perature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CON
Manufacture
INCHANGE
2N2222
NPN Silicon Transistor
Manufacture
SEMTECH
C1815
Silicon NPN Transistor
nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de
Manufacture
Toshiba Semiconductor
BC547
NPN Transistor

• Low current (max. 100 mA)
• Low voltage (max. 65 V). APPLICATIONS
• General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557. PINNING PIN 1 2 3 emitter base collec
Manufacture
Philips
2SC5200
NPN TRANSISTOR
solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a
Manufacture
Toshiba Semiconductor
BFX85
NPN switching transistor

• High current (max. 1 A)
• Low voltage (max. 60 V). APPLICATIONS
• General purpose switching and amplification
• Industrial applications. 1 handbook, halfpage BFX85 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION DESCRIPTIO
Manufacture
NXP
2N3055
NPN Transistor
ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter S
Manufacture
INCHANGE
D718
Silicon NPN Power Transistors
ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output
Manufacture
SavantIC
C5198
Silicon NPN Transistor
hin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
Manufacture
Toshiba Semiconductor

Total 27880 results






logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map