Part Number | Description | Manufacture |
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NPN Transistor istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Sa |
![]() INCHANGE |
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NPN Transistor age IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1.0A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Em |
![]() INCHANGE |
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NPN Transistor perature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CON |
![]() INCHANGE |
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NPN Transistor Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J |
![]() SeCoS |
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NPN Silicon Transistor |
![]() SEMTECH |
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Silicon NPN Transistor High Collector Current.(IC= 500mA). Complementary To S8550. Pb Lead-free Excellent HFE Linearity. High total power dissipation.(PC=300mW). S8050 APPLICATIONS High Collector Current.. ORDERING INFORMATION Type No. Marking S8050 J3Y |
![]() GME |
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Silicon NPN Power Transistors ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output |
![]() SavantIC |
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Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
![]() Toshiba Semiconductor |
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NPN Transistor Low-Frequency power Amp, Electronic Governor Applications TO-92MOD 5.800 6.200 0.400 0.600 8.400 8.800 0.900 1.100 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Volt |
![]() LGE |
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Silicon NPN Power Transistors |
![]() SavantIC |
Total 27875 results |