NPN Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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Elektronische Bauelemente KTC3205 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEAT

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For mediu

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SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collecto

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® PN2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code PN2222A PN2222A-AP s Marking Package / Shipment PN2222A TO-92 / Bulk PN2222A

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TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN ) TO-92 FEATURE z Excellent hFE linearity z Low noise z Comple

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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 2N3903 2N3904* *Motorola Preferred Device 2 BASE 1 EMITT

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB64

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2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline RENESAS Package code: PRS

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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ST 2SC1740 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups Q, R, S

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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www.DataSheet4U.com NPN General Purpose Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emit

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www.DataSheet4U.com H1061 TRIPLE DIFFUSED SILICON NPN TRANSISTOR … designed for low frequency power amplifier MAXIMUM RATINGS Characteristic Collec

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