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NPN Matched Datasheet



Part Number Description Manufacture
BD303
NPN Transistor
istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Sa
Manufacture
INCHANGE
H1061
NPN Transistor
age IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1.0A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Em
Manufacture
INCHANGE
3DD13009
NPN Transistor
perature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CON
Manufacture
INCHANGE
C3205
NPN Transistor
Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J
Manufacture
SeCoS
2N2222
NPN Silicon Transistor
Manufacture
SEMTECH
S8050
Silicon NPN Transistor

 High Collector Current.(IC= 500mA).
 Complementary To S8550. Pb Lead-free
 Excellent HFE Linearity.
 High total power dissipation.(PC=300mW). S8050 APPLICATIONS
 High Collector Current.. ORDERING INFORMATION Type No. Marking S8050 J3Y
Manufacture
GME
D718
Silicon NPN Power Transistors
ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output
Manufacture
SavantIC
C1815
Silicon NPN Transistor
nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de
Manufacture
Toshiba Semiconductor
D400
NPN Transistor
— Low-Frequency power Amp, Electronic Governor Applications TO-92MOD 5.800 6.200 0.400 0.600 8.400 8.800 0.900 1.100 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Volt
Manufacture
LGE
TIP41C
Silicon NPN Power Transistors
Manufacture
SavantIC

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