* Low Base Drive Requirement
* High Peak DC Current Gain
* Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
* Integrated Collector
* Emitter Free Wheeling Diode
* Fully Characterized and Guaranteed Dynam
BUL45D2G Datasheet (380.48 KB)
BUL45D2G
380.48 KB
Bipolar npn power transistor.
BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector Emitter Diode and Built in Efficient Antisatura.
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