BUL45D2 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL45D2/D BUL45D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL45D2 is state of art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally...
BUL45D2 Key Features
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 100 mA
- Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
- Integrated Collector-Emitter Free Wheeling Diode
- Fully Characterized and Guaranteed Dynamic VCE(sat)
- Continuous
- Peak (1) Base Current
- Continuous Base Current
- Peak (1)