Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUL45D2/D
Designer's
™ Data Sheet
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
The BUL45D2 is state- of- art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main Features
:
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 100 mA
- Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure...
