BUL45D2G Description
BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE...
BUL45D2G Key Features
- Low Base Drive Requirement
- High Peak DC Current Gain
- Integrated Collector-Emitter Free Wheeling Diode
- Fully Characterized and Guaranteed Dynamic VCE(sat)
- These Devices are Pb-Free and are RoHS pliant
- Continuous
- Peak (Note 1)
- Continuous
- Peak (Note 1)