Part BUL45D2G
Description Bipolar NPN Power Transistor
Category Transistor
Manufacturer onsemi
Size 380.48 KB
onsemi
BUL45D2G

Overview

  • Low Base Drive Requirement
  • High Peak DC Current Gain
  • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
  • Integrated Collector-Emitter Free Wheeling Diode
  • Fully Characterized and Guaranteed Dynamic VCE(sat)
  • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
  • These Devices are Pb-Free and are RoHS Compliant*