Datasheet4U Logo Datasheet4U.com

BUL45D2G Datasheet Bipolar NPN Power Transistor

Manufacturer: onsemi

Overview: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it also suitable for PFC application.

Key Features

  • Low Base Drive Requirement.
  • High Peak DC Current Gain.
  • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread.
  • Integrated Collector.
  • Emitter Free Wheeling Diode.
  • Fully Characterized and Guaranteed Dynamic VCE(sat).
  • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

BUL45D2G Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Motorola Inc Logo BUL45D2 NPN Transistor Motorola Inc

More Datasheets from onsemi

Part Number Description
BUL45D2 NPN Transistor
BUL45 NPN Transistor
BUL45F NPN Transistor
BUL45G NPN Silicon Power Transistor
BUL42D 4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
BUL44 NPN Transistor
BUL44D2 NPN Transistor
BUL44F NPN Transistor
BUL44G NPN Bipolar Power Transistor
BUL146FG SWITCHMODE NPN Bipolar Power Transistor