Datasheet4U Logo Datasheet4U.com

BUL45F - NPN Transistor

Key Features

  • include:.
  • Improved Efficiency Due to:.
  • Low Base Drive Requirements (High and Flat DC Current Gain hFE).
  • Low Power Losses (On.
  • State and Switching Operations).
  • Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ).
  • Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A.
  • Full Characterization at 125°C.
  • Tight Parametric Distributions Consistent Lot.
  • to.
  • Lot.
  • BUL45F, Case 221D, is UL Recognized at 3500 VRMS: Fi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUL45F NPN Transistor ON Semiconductor
BUL45 NPN Transistor ON Semiconductor
BUL45 SILICON POWER TRANSISTOR SavantIC
BUL45D2 NPN Transistor ON Semiconductor
BUL45D2G Bipolar NPN Power Transistor ON Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
BUL45 NPN Transistor
BUL45D2 NPN Transistor
BUL43B NPN Transistor
BUL44 NPN Transistor
BUL44D2 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL45/D Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE ™ Data Sheet BUL45 * BUL45F* *Motorola Preferred Device t Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: • Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain hFE) — Low Power Losses (On–State and Switching Operations) — Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ) — Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.