BUL45G Datasheet | onsemi

Features - Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain h FE)  Low Power Losses (On--State and Switching Operations)  Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  @ IC = 2.0 A, IB1 = IB2 = 0.4 A - Full Characterization at 125C - Tight Parametric Distributions Consistent Lot--to--Lot - These Devices are Pb--Free and are Ro HS pliant- MAXIMUM RATINGS Rating Collector--Emitter Sustaining Voltage Collector--Base Breakdown Voltage Emitter--Base Voltage Collector Current -- Continuous -- Peak (Note 1) Base Current Total Device Dissipation @ TC = 25_C Derate above 25C Symbol VCEO VCES VEBO IC ICM IB PD Value 400 5.0 10 75 0.6 Unit Vdc Vdc Vdc Adc Adc W W/_C Operating and Storage Temperature THERMAL CHARACTERISTICS TJ, Tstg --65 to 150 _C Characteristics Symbol Max Unit Thermal Resistance, Junction--to--Case RθJC _C/W Thermal Resistance, Junction--to--Ambient RθJA _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%. http://onsemi. POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 35 AND 75 WATTS TO--220AB CASE 221A--09 STYLE...