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BUV27
NPN Silicon Power Transistor
This device is designed for use in switching regulators and motor control.
Features
• Low Collection Emitter Saturation Voltage • Fast Switching Speed • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Sustaining Voltage Collector−Emitter Breakdown Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Base Current Total Device Dissipation (TC = 25°C) Derate above 25°C
VCEO VCBO VEBO
IC ICM IB PD
120 Vdc 240 Vdc 7.0 Vdc 12 Adc 20 Adc 4.0 Adc 70 W 0.56 W/°C
Operating and Storage Temperature
TJ, Tstg − 65 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
BUV27 Datasheet
