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BUV27 Datasheet Medium Power NPN Silicon Transistor

Manufacturer: STMicroelectronics

Overview: ® BUV27 MEDIUM POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s FAST SWITCHING SPEED s LOW COLLECTOR EMITTER SATURATION t(s)APPLICATIONS cs SWITCHING REGULATORS us MOTOR CONTROL.

General Description

PThe BUV27 is a Multiepitaxial Planar NPN teTransistor in TO-220 package.

It is intended for use in high frequency and efficency converters, - Obsoleswitching regulators and motor control.

3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM solete Product(s)ABSOLUTE MAXIMUM RATINGS ObSymbol Parameter Value Unit VCBO Collector-base Voltage (IE = 0) 240 V VCEO Collector-Emitter Voltage (IB = 0) 120 V VEBO Emitter-Base Voltage (IC = 0) 7V IC Collector Current 12 A ICM Collector Peak Current 20 A IB Base Current 4A IBM Base Peak Current Ptot Total Dissipation at Tc < 25 oC Ptot Total Dissipation at Tc < 60 oC Tstg Storage Temperature Tj Max.

BUV27 Distributor