onsemi BUV27
NPN Silicon Power Transistor
| Part No. | BUV27 |
|---|---|
| Datasheet | BUV27 Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon Power Transistor |
| Buy | Stock & Price |
FEATURES
● Low Collection Emitter Saturation Voltage● Fast Switching Speed
● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Sustaining Voltage Collector−Emitter Breakdown Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Base Current Total Device Dissipation (TC = 25°C) Derate above 25°C VCEO VCBO VEBO IC ICM IB PD 120 Vdc 240 Vdc 7.0 Vdc 12 Adc 20 Adc 4.0 Adc 70 W 0.56 W/°C Operating and Storage Temperature TJ, Tstg − 65 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. THERMAL CHARACTERISTICS Rating Symbol
