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  ON Semiconductor Electronic Components Datasheet  

CAT93C46B Datasheet

1Kb Microwire Serial EEPROM

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CAT93C46B pdf
CAT93C46B
1-Kb Microwire Serial
EEPROM
Description
The CAT93C46B is a 1Kb Serial EEPROM memory device which
is configured as either 64 registers of 16 bits (ORG pin at VCC) or 128
registers of 8 bits (ORG pin at GND). Each register can be written (or
read) serially by using the DI (or DO) pin. The CAT93C46B features a
selftimed internal write with autoclear. Onchip PowerOn Reset
circuit protects the internal logic against powering up in the wrong
state.
Features
High Speed Operation: 4 MHz
1.8 V (1.65 V*) to 5.5 V Supply Voltage Range
Selectable x8 or x16 Memory Organization
SelfTimed Write Cycle with AutoClear
Sequential Read
Software Write Protection
Powerup Inadvertant Write Protection
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial and Extended Temperature Ranges
8pin PDIP, SOIC, TSSOP and 8pad UDFN and TDFN Packages
This Device is PbFree, Halogen Free/BFR Free and RoHS
Compliant
VCC
ORG
CS
SK
DI
CAT93C46B
DO
GND
Figure 1. Functional Symbol
*CAT93C46BxxxxL (TA = 205C to +855C)
†For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
PDIP8
L SUFFIX
CASE 646AA
TSSOP8
Y SUFFIX
CASE 948AL
SOIC8
V, W** SUFFIX
CASE 751BD
SOIC8
X SUFFIX
CASE 751BE
UDFN8
HU4 SUFFIX
CASE 517AZ
TDFN8**
VP2 SUFFIX
CASE 511AK
PIN CONFIGURATIONS
CS 1
SK
DI
DO
VCC
NC
ORG
GND
NC
VCC
CS
SK
1
ORG
GND
DO
DI
PDIP (L), SOIC (V, X),
TSSOP (Y), UDFN (HU4),
TDFN (VP2)**
(Top View)
SOIC (W)**
(Top View)
** Not recommended for new designs.
PIN FUNCTION
Pin Name
Function
CS Chip Select
SK Clock Input
DI Serial Data Input
DO Serial Data Output
VCC
GND
Power Supply
Ground
ORG
Memory Organization
NC No Connection
Note: When the ORG pin is connected to VCC, the
x16 organization is selected. When it is connected
to ground, the x8 organization is selected. If the
ORG pin is left unconnected, then an internal pullup
device will select the x16 organization.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
January, 2014 Rev. 3
1
Publication Order Number:
CAT93C46B/D


  ON Semiconductor Electronic Components Datasheet  

CAT93C46B Datasheet

1Kb Microwire Serial EEPROM

No Preview Available !

CAT93C46B pdf
CAT93C46B
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Units
Storage Temperature
65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than 0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than 1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min Units
NEND (Note 3)
Endurance
1,000,000
Program / Erase Cycles
TDR Data Retention
100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100
and JEDEC test methods.
3. Block Mode, VCC = 5 V, 25°C
Table 3. D.C. OPERATING CHARACTERISTICS
(VCC = +1.8 V to +5.5 V, TA = 40°C to +125°C, VCC = +1.65 V to +5.5 V, TA = 20°C to +85°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min Max
Units
ICC1 Supply Current (Write) Write, VCC = 5.0 V
1 mA
ICC2
Supply Current (Read) Read, DO open, fSK = 2 MHz, VCC = 5.0 V
500 mA
ISB1
Standby Current
VIN = GND or VCC
TA = 40°C to +85°C
(x8 Mode)
CS = GND, ORG = GND
TA = 40°C to +125°C
2 mA
5
ISB2
Standby Current
(x16 Mode)
VCISN
=
=
GND
GND,
or
VCC
ORG = Float or VCC
TA = 40°C to +85°C
TA = 40°C to +125°C
1 mA
3
ILI Input Leakage Current VIN = GND to VCC
TA = 40°C to +85°C
1 mA
TA = 40°C to +125°C
2
ILO
Output Leakage
VOUT = GND to VCC
Current
CS = GND
TA = 40°C to +85°C
TA = 40°C to +125°C
1 mA
2
VIL1
Input Low Voltage
4.5 V VCC < 5.5 V
0.1
0.8 V
VIH1
Input High Voltage
4.5 V VCC < 5.5 V
2
VCC + 1
V
VIL2
Input Low Voltage
1.65 V VCC < 4.5 V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.65 V VCC < 4.5 V
VCC x 0.7
VCC + 1
V
VOL1
Output Low Voltage
4.5 V VCC < 5.5 V, IOL = 3 mA
0.4 V
VOH1
Output High Voltage
4.5 V VCC < 5.5 V, IOH = 400 mA
2.4 V
VOL2
Output Low Voltage
1.65 V VCC < 4.5 V, IOL = 1 mA
0.2 V
VOH2
Output High Voltage
1.65 V VCC < 4.5 V, IOH = 100 mA
VCC 0.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. PIN CAPACITANCE (TA = 25°C, f = 1 MHz, VCC = 5 V)
Symbol
Test
Conditions
Min Typ Max Units
COUT (Note 4)
Output Capacitance (DO)
VOUT = 0 V
5 pF
CIN (Note 4)
Input Capacitance (CS, SK, DI, ORG)
VIN = 0 V
5 pF
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100
and JEDEC test methods.
http://onsemi.com
2


Part Number CAT93C46B
Description 1Kb Microwire Serial EEPROM
Maker ON Semiconductor
Total Page 14 Pages
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