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CNY17 Datasheet Phototransistor Optocouplers

Manufacturer: onsemi

Overview: 6-Pin DIP High BVCEO Phototransistor Optocouplers CNY17 Series,.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package.

Key Features

  • High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
  • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit.
  • to.
  • Unit Variation.
  • Current Transfer Ratio In Select Groups.
  • Very Low Coupled Capacitance Along With No Chip.
  • to.
  • Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M).
  • Safety and Regulatory Approvals:  UL1577, 4,170 VACRMS for 1 Minute  DIN.
  • EN/IEC60747.
  • 5.
  • 5, 850 V Peak Working Ins.

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