CNY17 Datasheet | Siemens Semiconductor Group

FEATURES - High Current Transfer Ratio CNY17-1, 40 to 80% CNY17-2, 63 to 125% CNY17-3, 100 to 200% CNY17-4, 160 to 320% - Breakdown Voltage, 5300 VACRMS - Field-Effect Stable by TRIOS- - Long Term Stability - Industry Standard Dual-in-Line Package - Underwriters Lab File #E52744 V - VDE #0884, Available with Option 1 Dimensions in inches (mm) Pin One ID 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18° typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81) DESCRIPTION The CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. Maximum Ratings (TA=25°C) Emitter Reverse Voltage 6 V Forward Current 60 m A Surge Current (t≤10µs) 2.5 A Power Dissipation 100 m W Detector Collector-Emitter Breakdown Voltage 70 V Emitter-Base Breakdown Voltage 7 V Collector Current 50 m A Collector Current (t <1 ms) 100 m A Power Dissipation 150 m W Package Isolation Test Voltage (Between emitter & detector referred to climate DIN 40046, part 2, Nov. 74) 5300 VACRMS Creepage Distance ≥7 mm...