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CNY17 - Phototransistor Optocouplers

This page provides the datasheet information for the CNY17, a member of the CNY171M Phototransistor Optocouplers family.

Product Overview

ON Semiconductor

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CNY17 Phototransistor Optocouplers by ON Semiconductor - Datasheet Preview — Datasheet preview – CNY17

Datasheet Details

Part number	CNY17
Manufacturer	ON Semiconductor
File Size	367.63 KB
Description	Phototransistor Optocouplers
Datasheet	CNY17 Datasheet
Additional preview pages of the CNY17 datasheet.

CNY17 Product details

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in

line package.

Features

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit.
to.
Unit Variation.
Current Transfer Ratio In Select Groups.
Very Low Coupled Capacitance Along With No Chip.
to.
Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M).
Safety and Regulatory Approvals:  UL1577, 4,170 VACRMS for 1 Minute  DIN.
EN/IEC60747.
5.
5, 850 V Peak Working Ins.

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Other Datasheets by ON Semiconductor

CNY171M - Phototransistor Optocouplers
CNY171SM - Phototransistor Optocouplers
CNY171TM - Phototransistor Optocouplers
CNY171VM - Phototransistor Optocouplers

Published: Jul 22, 2023 |