Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in
line package.
Features
- High BVCEO: 70 V Minimum
(CNY17XM, CNY17FXM, MOC8106M).
- Closely Matched Current Transfer Ratio (CTR) Minimizes
Unit.
- to.
- Unit Variation.
- Current Transfer Ratio In Select Groups.
- Very Low Coupled Capacitance Along With
No Chip.
- to.
- Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M).
- Safety and Regulatory Approvals:
UL1577, 4,170 VACRMS for 1 Minute DIN.
- EN/IEC60747.
- 5.
- 5, 850 V Peak Working
Ins.
CNY171M Datasheet
