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CPH3457 Datasheet

N-Channel Power MOSFET

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Ordering number : ENA1804B
CPH3457
N-Channel Power MOSFET
30V, 3A, 95m, Single CPH3
http://onsemi.com
Features
ON-resistance RDS(on)1=73mW(typ.)
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
Conditions
PW≤10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Value
30
±12
3
12
1.0
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
CPH3457-TL-H
0.15 CPH3457-TL-W
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
1
0.95
2
0.4
0.05
1 : Gate
2 : Source
3 : Drain
CPH3
TL
Electrical Connection
3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
42814HK TC-00003117/90110TKIM PE No. A1804-1/5


  ON Semiconductor Electronic Components Datasheet  

CPH3457 Datasheet

N-Channel Power MOSFET

No Preview Available !

CPH3457
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4.5V
ID=0.75A, VGS=2.5V
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=15V, VGS=4.5V, ID=3A
VDS=15V, VGS=4.5V, ID=3A
VDS=15V, VGS=4.5V, ID=3A
IS=3A, VGS=0V
min
30
Value
typ
0.4
2.7
73
95
135
265
35
28
5.1
10
137
36
3.5
0.57
0.93
0.87
max
1
±10
1.3
95
133
203
1.2
Unit
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
4.5V
0V
PW=10ms
D.C.1%
VIN
G
VDD=15V
ID=1.5A
RL=10
D VOUT
P.G 50
S CPH3457
Ordering Information
Device
CPH3457-TL-H
CPH3457-TL-W
Package
CPH3
Shipping
3,000pcs./reel
memo
Pb-Free and Halogen Free
No. A1804-2/5


Part Number CPH3457
Description N-Channel Power MOSFET
Maker ON Semiconductor
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CPH3457 Datasheet PDF






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